050-4909 rev c 7-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain voltage 1 (i d (on) = 5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 5a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 450 4 25 250 100 3 5.8 25 unit volts ana mhos volts symbol v dss v dgo i d v gs p d r jc t j ,t stg t l parameterdrain-source voltage drain-gate voltage continuous drain current @ t c = 25c gate-source voltagetotal power dissipation @ t c = 25c junction to caseoperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf449a/449b (g) 450450 9 30 165 0.76 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n - channel enhancement mode 150v 90w 120mhz the arf449a and arf449b comprise a symmetric pair of common source rf power transistors designed for push-pull scientific, commercial, medical and industrial rf power amplifier applications up to 120 mhz. specified 150 volt, 81.36 mhz characteristics: output power = 90 watts. gain = 13db (class c) efficiency = 75% low cost common source rf package. very high breakdown for improved ruggedness. low thermal resistance. nitride passivated die for improved reliability. to-247 arf449a (g) arf449b (g) g d s commonsource caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
050-4909 rev c 7-2003 dynamic characteristics arf449a/449b(g) symbol c iss c oss c rss t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 150v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6y min typ max 980 1200 87 120 25 40 51 0 3.1 7 15 25 37 unit pf ns functional characteristics symbol g ps test conditions f = 81.36 mhz v gs = 0v v dd = 150v p out = 90w no degradation in output power characteristiccommon source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 min typ max 12 13 70 75 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2%apt reserves the right to change, without notice, the specifications and information contained herein. 1 5 10 50 100 500 gain (db) frequency (mhz) figure 1, typical gain vs frequency 3025 20 15 10 50 30 45 60 75 90 105 120 class c v dd = 150v p out = 150w 1612 84 0 02 468 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 30001000 500100 5010 1 5 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 5010 51 .5.1 10s1ms 10ms 100ms dc 100s downloaded from: http:///
050-4909 rev c 7-2003 freq. (mhz) z in - gate shunted by 25 z ol - conjugate of optimum load impedance for 150w at 150v z in ( )z ol ( ) 2.0 13.527.0 40.0 65.0 80.0 100.0 93.0 - j 1063.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 225.1 - j 16 3.4 - j 12 23.00 - j 7.0 4.30 - j 9.11.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 g ps , common source amplifier gain (db) p out , power out (watts) figure 8, typical common source amplifier gain vs power out 1412 10 86 0 40 80 120 160 t c , case temperature (c) figure 5, typical threshold voltage vs temperature 1.21.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 160120 8040 0 02 4 681 0 2520 15 10 50 1 5 10 15 20 25 30 p in , power in (watts) figure 7, typical power out vs power in p out , power out (watts) v ds , drain-to-source voltage (volts) figure 6, typical output characteristics i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf449a/449b (g) 5.5v 4.5v 5v 6v v gs =8, 10 & 15v z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.80.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 class c v dd = 150v f = 81.36 mhz table 1 - typical class c large signal inpu t-o utput impedance class c v dd = 150v f = 81.36 mhz 6.5v downloaded from: http:///
050-4909 rev c 7-2003 l1 c2 t1 r1 dut l2 l3 l4 c3 c6 c7 c5 l5 150v + - rf output rf input c1 -- 680pf unelcoc2-c4 -- arco 463 mica trimmer c5-c7 -- 1nf 500v cog chip l1 -- 0.8" #18 awg into hairpin ~19nh l2-l3 -- 3t #18 awg .25" id ~50nh l4 -- 10t #18 awg .25" id ~470nh l5 -- vk200-4b ferrite choke ~3uh r1 -- 25 ohm 1/2w carbon t1 -- 4:1 broadband transformer 81.36 mhz test circuit c1 c4 parts list to-247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) source 2-plcs. top view arf449a device arf449b gate drain source source drain gate dimensions in millimeters and (inches)note: the arf446 and arf447 comprise a symmetric pair of rf power transistors and meet the same electricalspecifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. arf449a/449b (g) 81.36 mhz test circuit e3 100% sn plated downloaded from: http:///
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